EDC (Electronic Devices and Circuits) units : 4,5,6 Important questions





UNIT IV

1.  a) Compare CE, CB and CC configurations.                                                                           
b) Explain in detail the working of JFET and draw its drain and transfer characteristics.
2.  a) Explain the input and output Characteristic of a transistor in Common Emitter Configuration                                    b) A transistor has IB= 100µA and IC= 2µA Find i) βof the transistor ii) αof the transistor iii) Emitter current IE iv) if IBchanges by +25µA and IC n changes by +0.6mA. Find the new valve of β?                                               
3.  a) Explain the characteristic parameters of the JFET                                                                                                   
b) A JFET has a driven current of 4mA.If Dss = 8mA  andVgs(off)= - 6V. find the values of Vgs and Vp.
4.  a) With the help of suitable diagrams explain the working of different types of MOSFET.                                  
b) Compare the MOSFET with JFET.

UNIT V

1.a) What is Biasing? Explain the need of it. List out different types of biasing methods.                               b) If the various parameters of a CE Amplifier which uses the self bias method are VCC=12V, R1=5KΩ, R2=10KΩ, RC=3KΩ, Re=1KΩand β=50, find i) the coordinates of the operating point and ii) the Stability Factor, assuming the transistor made of silicon.
2.  a) Explain in detail about Bias compensation method b) Explain in detail about compensation against variation in VBE, ICO.
5.  a) Explain about Self Bias in Amplifiers.                                                                                                                              b) Derive the expression for stability factor of self bias circuit.       
4.  In a Self bias circuit containing R1=50KΩ, R2=25KΩ, Re=1KΩ, RC=3KΩ,  β=90, VCC=12V, VBE=0.7V. Find the operating point, S and S’b) Explain about Thermistor and Sensistor compensation.

UNIT VI

1.  Derive the Expressions for voltage gain, current gain, input impedance, output impedance of a CE amplifier, using exact and approximate model. 
2. a) Give the approximate H-parameter conversion formulae for CC and CB configuration in terms of CE. b) Compare AV, AI, Riand Roof CE, CB and CC configurations.
4. a) Analyze a Single stage transistor amplifier using h-parameters.b) The H-parameters of a Transistor used in a CE circuit are hie=1KΩ, hre=0.001. hfe=50, hoe=100K. The load resistance for the transistor is 1KΩin the collector circuit. Determine Ri, RO, AV, Ai in the amplifier stage (Assume Rs= 1KΩ).

6.  a) Why Hybrid parameters are called so? Define them.                                                                                                    b) A CE amplifier has the h-parameters given by hie= 1000Ω,hre = 2 x 10-4, hfe=50 and hoe =25µmho. If both the load and source resistance are 1k Ω, Determine the i) Current gain ii) Voltage gain 
EDC (Electronic Devices and Circuits) units : 4,5,6 Important questions EDC (Electronic Devices and Circuits) units : 4,5,6 Important questions Reviewed by Suresh Bojja on 10/18/2016 09:31:00 PM Rating: 5

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